TY  - JOUR
AU  - Požega, Emina
AU  - Marjanović, Saša
AU  - Vuković, Nikola
AU  - Gomidželović, Lidija
AU  - Mitrović, Milijana
AU  - Janošević, Miloš
AU  - Adamović, Dragan
PY  - 2023
UR  - https://ritnms.itnms.ac.rs/handle/123456789/1196
AB  - The Bi0.5As1.5Te2.98Se0.02 single crystal in 11 mm × 80 mm size was grown using the Bridgman method. Energy dispersive spectrometry (EDS) analysis was used to determine the chemical composition of the studied samples, as well as for checking and confirming the homogeneity of the samples. Mobility, concentration of charge majority carriers and Hall coefficient of single crystal, were determined using a Hall Effect system based on the Van der Pauw method. Hall Effect was measured at room temperature with four ohmic contacts and at temperature of liquid nitrogen with silver contacts with an applied magnetic field strength of 0.37 T at different current intensities. The expected improvement in the mobility of obtained single crystal doped with this content of arsenic was not obtained.
PB  - Belgrade : Association for ETRAN Society
T2  - Science of Sintering
T1  - The Bridgman method of (BiAs)2(TeSe)3 bulk single crystal growth by spontaneous nucleation
EP  - 338
IS  - 3
SP  - 331
VL  - 55
DO  - 10.2298/SOS220619012P
ER  - 

@article{
author = "Požega, Emina and Marjanović, Saša and Vuković, Nikola and Gomidželović, Lidija and Mitrović, Milijana and Janošević, Miloš and Adamović, Dragan",
year = "2023",
abstract = "The Bi0.5As1.5Te2.98Se0.02 single crystal in 11 mm × 80 mm size was grown using the Bridgman method. Energy dispersive spectrometry (EDS) analysis was used to determine the chemical composition of the studied samples, as well as for checking and confirming the homogeneity of the samples. Mobility, concentration of charge majority carriers and Hall coefficient of single crystal, were determined using a Hall Effect system based on the Van der Pauw method. Hall Effect was measured at room temperature with four ohmic contacts and at temperature of liquid nitrogen with silver contacts with an applied magnetic field strength of 0.37 T at different current intensities. The expected improvement in the mobility of obtained single crystal doped with this content of arsenic was not obtained.",
publisher = "Belgrade : Association for ETRAN Society",
journal = "Science of Sintering",
title = "The Bridgman method of (BiAs)2(TeSe)3 bulk single crystal growth by spontaneous nucleation",
pages = "338-331",
number = "3",
volume = "55",
doi = "10.2298/SOS220619012P"
}

Požega, E., Marjanović, S., Vuković, N., Gomidželović, L., Mitrović, M., Janošević, M.,& Adamović, D.. (2023). The Bridgman method of (BiAs)2(TeSe)3 bulk single crystal growth by spontaneous nucleation. in Science of Sintering
Belgrade : Association for ETRAN Society., 55(3), 331-338.
https://doi.org/10.2298/SOS220619012P

Požega E, Marjanović S, Vuković N, Gomidželović L, Mitrović M, Janošević M, Adamović D. The Bridgman method of (BiAs)2(TeSe)3 bulk single crystal growth by spontaneous nucleation. in Science of Sintering. 2023;55(3):331-338.
doi:10.2298/SOS220619012P .

Požega, Emina, Marjanović, Saša, Vuković, Nikola, Gomidželović, Lidija, Mitrović, Milijana, Janošević, Miloš, Adamović, Dragan, "The Bridgman method of (BiAs)2(TeSe)3 bulk single crystal growth by spontaneous nucleation" in Science of Sintering, 55, no. 3 (2023):331-338,
https://doi.org/10.2298/SOS220619012P . .

TY  - JOUR
AU  - Požega, Emina
AU  - Vuković, Nikola
AU  - Gomidželović, Lidija
AU  - Janošević, Miloš
AU  - Jovanović, Milenko
AU  - Marjanović, Saša
AU  - Mitrović, Milijana
PY  - 2023
UR  - https://ritnms.itnms.ac.rs/handle/123456789/950
AB  - In order to study the effect of Zr doping on the thermoelectric properties of p-type Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 single crystal, аn ingot was prepared by Bridgman method. Cut and cleaved samples from different regions of ingot were characterized by a Hall Effect based on the Van der Pauw method. The first measurements were conducted with four ohmic contacts at room temperature and the obtained results were presented in our investigation, earlier. Аlso, high charge carriers mobility was obtained on the sample with silver contacts at the temperature of liquid nitrogen. Single crystal was characterized by Seebeck coefficient (S), conductivity (κ) and resistivity (ρ) measurements as а function of temperature in the range of 40-320°C by a home-made impedance meter. The prepared single crystal has a figure of merit (Z) of 1.22 x 10-3 K-1 at 300°C.
AB  - У циљу проучавања утицаја допирања Zr на термоелектричне особине монокристала Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 п-типа, припремљен је ингот Бриџмановом методом. Сечени и цепани узорци из различитих делова ингота испитивани су Холовим ефектом заснованим на Ван дер Пауовој методи. Прва мерења су спроведена са четири омска контакта на собној температури и добијени резултати су представљени у нашим истраживањима раније. Такође, добијена је висока покретљивост носиоца наелектрисања и на узорку са сребрним контактима на температури течног азота. Монокристал је испитиван мерењима Зебековог коефицијента (S), мерењима проводљивости (κ) и отпорности (ρ) у опсегу температуре од 40-320°C мерачем импедансе домаће израде. Добијени монокристал има вредност фактора квалитета (Z) од 1.22x10-3 K-1 на 300°C.
PB  - Belgrade : Association for ETRAN Society
T2  - Science of Sintering
T1  - Improving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping
EP  - 70
IS  - 1
SP  - 57
VL  - 55
DO  - 10.2298/SOS2301057P
ER  - 

@article{
author = "Požega, Emina and Vuković, Nikola and Gomidželović, Lidija and Janošević, Miloš and Jovanović, Milenko and Marjanović, Saša and Mitrović, Milijana",
year = "2023",
abstract = "In order to study the effect of Zr doping on the thermoelectric properties of p-type Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 single crystal, аn ingot was prepared by Bridgman method. Cut and cleaved samples from different regions of ingot were characterized by a Hall Effect based on the Van der Pauw method. The first measurements were conducted with four ohmic contacts at room temperature and the obtained results were presented in our investigation, earlier. Аlso, high charge carriers mobility was obtained on the sample with silver contacts at the temperature of liquid nitrogen. Single crystal was characterized by Seebeck coefficient (S), conductivity (κ) and resistivity (ρ) measurements as а function of temperature in the range of 40-320°C by a home-made impedance meter. The prepared single crystal has a figure of merit (Z) of 1.22 x 10-3 K-1 at 300°C., У циљу проучавања утицаја допирања Zr на термоелектричне особине монокристала Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 п-типа, припремљен је ингот Бриџмановом методом. Сечени и цепани узорци из различитих делова ингота испитивани су Холовим ефектом заснованим на Ван дер Пауовој методи. Прва мерења су спроведена са четири омска контакта на собној температури и добијени резултати су представљени у нашим истраживањима раније. Такође, добијена је висока покретљивост носиоца наелектрисања и на узорку са сребрним контактима на температури течног азота. Монокристал је испитиван мерењима Зебековог коефицијента (S), мерењима проводљивости (κ) и отпорности (ρ) у опсегу температуре од 40-320°C мерачем импедансе домаће израде. Добијени монокристал има вредност фактора квалитета (Z) од 1.22x10-3 K-1 на 300°C.",
publisher = "Belgrade : Association for ETRAN Society",
journal = "Science of Sintering",
title = "Improving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping",
pages = "70-57",
number = "1",
volume = "55",
doi = "10.2298/SOS2301057P"
}

Požega, E., Vuković, N., Gomidželović, L., Janošević, M., Jovanović, M., Marjanović, S.,& Mitrović, M.. (2023). Improving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping. in Science of Sintering
Belgrade : Association for ETRAN Society., 55(1), 57-70.
https://doi.org/10.2298/SOS2301057P

Požega E, Vuković N, Gomidželović L, Janošević M, Jovanović M, Marjanović S, Mitrović M. Improving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping. in Science of Sintering. 2023;55(1):57-70.
doi:10.2298/SOS2301057P .

Požega, Emina, Vuković, Nikola, Gomidželović, Lidija, Janošević, Miloš, Jovanović, Milenko, Marjanović, Saša, Mitrović, Milijana, "Improving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping" in Science of Sintering, 55, no. 1 (2023):57-70,
https://doi.org/10.2298/SOS2301057P . .